TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS

被引：27

作者：

KANE, MJ

ANDERSON, DA

TAYLOR, LL

BASS, SJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：657 / 664

页数：8

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[1] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR
BASS, SJ
YOUNG, ML
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 311 - 318
[2] SELF-CONSISTENT VARIATIONAL CALCULATIONS AND ALLOY SCATTERING IN SEMICONDUCTOR HETEROJUNCTIONS
BASTARD, G
[J]. SURFACE SCIENCE, 1984, 142 (1-3) : 284 - 289
[3] ALLOY SCATTERING LIMITED MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS FORMED IN IN0.53GA0.47AS
BASU, PK
NAG, BR
[J]. SURFACE SCIENCE, 1984, 142 (1-3) : 256 - 259
[4] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
GULDNER, Y
VIEREN, JP
VOISIN, P
VOOS, M
RAZEGHI, M
POISSON, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
[5] MOBILITY MODULATION OF THE TWO-DIMENSIONAL ELECTRON-GAS VIA CONTROLLED DEFORMATION OF THE ELECTRON WAVE-FUNCTION IN SELECTIVELY DOPED ALGAAS-GAAS HETEROJUNCTIONS
HIRAKAWA, K
SAKAKI, H
YOSHINO, J
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (12) : 1279 - 1282
[6] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS
KANE, MJ
APSLEY, N
ANDERSON, DA
TAYLOR, LL
KERR, T
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636
[7] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE
KASTALSKY, A
DINGLE, R
CHENG, KY
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277
[8] STUDY OF PERSISTENT PHOTOCONDUCTIVITY EFFECT IN N-TYPE SELECTIVELY DOPED ALGAAS/GAAS HETEROJUNCTION
KASTALSKY, A
HWANG, JCM
[J]. SOLID STATE COMMUNICATIONS, 1984, 51 (05) : 317 - 322
[9] THE STRUCTURAL DEPENDENCE OF LIGHT SENSITIVITY IN (AL,GA)AS/GAAS MODULATION DOPED HETEROSTRUCTURES
KLEM, J
DRUMMOND, TJ
FISCHER, R
HENDERSON, T
MORKOC, H
NATHAN, M
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) : 741 - 748
[10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030