THE STRUCTURAL DEPENDENCE OF LIGHT SENSITIVITY IN (AL,GA)AS/GAAS MODULATION DOPED HETEROSTRUCTURES

被引：9

作者：

KLEM, J

DRUMMOND, TJ

FISCHER, R

HENDERSON, T

MORKOC, H

NATHAN, M

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 05期

关键词：

D O I：

10.1007/BF02657923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：741 / 748

页数：8

共 16 条

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[5]

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[6] PERSISTENT PHOTOCONDUCTIVITY IN (AL,GA)AS/GAAS MODULATION DOPED STRUCTURES - DEPENDENCE ON STRUCTURE AND GROWTH TEMPERATURE [J].

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[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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[10] ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS [J].

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