ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS

被引：114

作者：

LEE, K

SHUR, M

DRUMMOND, TJ

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.332259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2093 / 2096

页数：4

共 13 条

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[4]

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[6] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

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[7]

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[8]

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[9]

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[10] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].

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