TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS

被引：27

作者：

KANE, MJ

ANDERSON, DA

TAYLOR, LL

BASS, SJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：657 / 664

页数：8

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[21] ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES
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[22] PERSISTENT PHOTOCONDUCTIVITY AND THE QUANTIZED HALL-EFFECT IN IN0.53GA0.47AS/INP HETEROSTRUCTURES
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[23] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSPORT-PROPERTIES OF MODULATION-DOPED ALGAAS-GAAS HETEROSTRUCTURES
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[24] TWO-DIMENSIONAL ELECTRON-GAS IN IN0.53GA0.47 AS/INP HETEROJUNCTIONS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION
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