TWO-DIMENSIONAL ELECTRON-GAS IN IN0.53GA0.47 AS/INP HETEROJUNCTIONS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION

被引：15

作者：

ZHU, LD ^{[1
]}

SULEWSKI, PE ^{[1
]}

CHAN, KT ^{[1
]}

MURO, K ^{[1
]}

BALLANTYNE, JM ^{[1
]}

SIEVERS, AJ ^{[1
]}

机构：

[1] CORNELL UNIV, DEPT PHYS CHEM, ITHACA, NY 14853 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.335818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3145 / 3149

页数：5

共 23 条

[1] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) :1616-1626

[2] INFRARED REFLECTION SPECTRA OF GA1-XINXAS - A NEW TYPE OF MIXED-CRYSTAL BEHAVIOR [J].

BRODSKY, MH ;

LUCOVSKY, G .

PHYSICAL REVIEW LETTERS, 1968, 21 (14) :990-&

[3] GROWTH OF HIGH-QUALITY GAINAS ON INP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

CHAN, KT ;

ZHU, LD ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :44-46

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

FOWLER, AB ;

FANG, FF ;

HOWARD, WE ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&

[6] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GULDNER, Y ;

VIEREN, JP ;

VOISIN, P ;

VOOS, M ;

RAZEGHI, M ;

POISSON, MA .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :877-879

[7] OPTICAL ABSORPTION SPECTRUM OF HYDROGENIC ATOMS IN A STRONG MAGNETIC FIELD [J].

HASEGAWA, H ;

HOWARD, RE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) :179-198

[8] ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES [J].

HIYAMIZU, S ;

NANBU, K ;

MIMURA, T ;

FUJII, T ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L378-L380

[9] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].

HIYAMIZU, S ;

SAITO, J ;

NANBU, K ;

ISHIKAWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611

[10] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].

MIMURA, T ;

JOSHIN, K ;

HIYAMIZU, S ;

HIKOSAKA, K ;

ABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L598-L600

← 1 2 3 →