ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES

被引：413

作者：

WALUKIEWICZ, W ^{[1
]}

RUDA, HE ^{[1
]}

LAGOWSKI, J ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.30.4571

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4571 / 4582

页数：12

共 35 条

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[2] ENERGY-LEVELS AND ALLOY SCATTERING IN INP-IN (GA)AS HETEROJUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 591 - 593
[3] ESTIMATION OF ALLOY SCATTERING POTENTIAL IN TERNARIES FROM THE STUDY OF TWO-DIMENSIONAL ELECTRON-TRANSPORT
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NAG, BR
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 689 - 691
[4] LATTICE SCATTERING MOBILITY OF A TWO-DIMENSIONAL ELECTRON-GAS IN GAAS
BASU, PK
NAG, BR
[J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4849 - 4852
[5] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[6] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
CHADI, DJ
COHEN, ML
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : 405 - 419
[7] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
DRUMMOND, TJ
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149
[8] DILORENZO JV, 1982, INT ELECTRON DEVICE, V25, P578
[9] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[10] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386

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