MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSPORT-PROPERTIES OF MODULATION-DOPED ALGAAS-GAAS HETEROSTRUCTURES

被引：40

作者：

WEIMANN, G

SCHLAPP, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.95916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：411 / 413

页数：3

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