共 10 条
- [1] ABE M, 1983, IEEE GAAS IC S, P158
- [2] DAMBKES H, 1984, UNPUB FESTKORPERPROB, V24
- [3] DAMBKES H, 1984, IEEE T ED, V31
- [4] JOSHIN K, 1983, IEEE MTT S, P563
- [7] MIMURA T, 1983, FUJITSU SCI TECH J, V19, P243
- [9] SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FOR FIELD-EFFECT TRANSISTORS .2. HOT-ELECTRON EFFECTS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (03): : 183 - 193
- [10] SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FOR FIELD-EFFECT TRANSISTORS .1. EFFECT OF PARALLEL CONDUCTANCE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02): : 63 - 76