SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FOR FIELD-EFFECT TRANSISTORS .1. EFFECT OF PARALLEL CONDUCTANCE

被引：67

作者：

SCHUBERT, EF ^{[1
]}

PLOOG, K ^{[1
]}

DAMBKES, H ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] UNIV DUISBURG,FACHGEBIET HALBLEITERTECH HALBLEITERTECHNOL,D-4100 DUISBURG 1,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 33卷 / 02期

关键词：

D O I：

10.1007/BF00617610

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：63 / 76

页数：14

相关论文

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