HIGH-SPEED FREQUENCY-DIVIDERS USING GAAS/GAALAS HIGH-ELECTRON-MOBILITY TRANSISTORS

被引：8

作者：

LEE, CP

LEE, SJ

HOU, D

MILLER, DL

ANDERSON, RJ

SHENG, NH

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 05期

关键词：

D O I：

10.1049/el:19840144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：217 / 219

页数：3

共 8 条

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[2] SELECTIVELY DOPED HETEROSTRUCTURE FREQUENCY-DIVIDERS [J].

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FEUER, MD ;

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ALLYN, CL ;

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[3] HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J].

LEE, CP ;

WANG, WI .

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[4]

LEE CP, 1983, 41ST DEV RES C BURL

[5] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

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NANBU, K .

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[6]

NISHIUCHI K, 1983, 41ST DEV RES C BURL

[7] MODULATION-DOPED (AL, GA)AS/GAAS FETS WITH HIGH TRANSCONDUCTANCE AND ELECTRON VELOCITY [J].

SU, SL ;

FISCHER, R ;

DRUMMOND, TJ ;

LYONS, WG ;

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MORKOC, H .

ELECTRONICS LETTERS, 1982, 18 (18) :794-796

[8] HIGH-SPEED LOW-POWER DCFL USING PLANAR TWO-DIMENSIONAL ELECTRON-GAS FET TECHNOLOGY [J].

TUNG, PN ;

DELESCLUSE, P ;

DELAGEBEAUDEUF, D ;

LAVIRON, M ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1982, 18 (12) :517-518

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