MODULATION-DOPED (AL, GA)AS/GAAS FETS WITH HIGH TRANSCONDUCTANCE AND ELECTRON VELOCITY

被引：14

作者：

SU, SL ^{[1
]}

FISCHER, R ^{[1
]}

DRUMMOND, TJ ^{[1
]}

LYONS, WG ^{[1
]}

THORNE, RE ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 18期

关键词：

D O I：

10.1049/el:19820538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：794 / 796

页数：3

共 13 条

[1] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
DELAGEBEAUDEUF, D
LINH, NT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
[2] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS)
DRUMMOND, TJ
KOPP, W
MORKOC, H
KEEVER, M
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 277 - 279
[3] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[4] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
KEEVER, M
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1023 - 1028
[5] EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE
HIYAMIZU, S
MIMURA, T
FUJII, T
NANBU, K
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L245 - L248
[6] LOW-NOISE NORMALLY ON AND NORMALLY OFF TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
LAVIRON, M
DELAGEBEAUDEUF, D
DELESCLUSE, P
ETIENNE, P
CHAPLART, J
LINH, NT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 530 - 532
[7] LINH NT, 1982, JUN WORKSH PHYS SUBM
[8] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS
MIMURA, T
HIYAMIZU, S
JOSHIN, K
HIKOSAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319
[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[10] CURRENT TRANSPORT IN MODULATION DOPED (AL,GA)AS-GAAS HETEROSTRUCTURES - APPLICATIONS TO HIGH-SPEED FETS
MORKOC, H
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 260 - 261

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