PERSISTENT PHOTOCONDUCTIVITY AND THE QUANTIZED HALL-EFFECT IN IN0.53GA0.47AS/INP HETEROSTRUCTURES

被引：40

作者：

WEI, HP ^{[1
]}

TSUI, DC ^{[1
]}

RAZEGHI, M ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：666 / 668

页数：3

共 12 条

[1] LOW-TEMPERATURE INVESTIGATIONS OF THE QUANTUM HALL-EFFECT IN INXGA1-XAS-INP HETEROJUNCTIONS
BRIGGS, A
GULDNER, Y
VIEREN, JP
VOOS, M
HIRTZ, JP
RAZEGHI, M
[J]. PHYSICAL REVIEW B, 1983, 27 (10): : 6549 - 6552
[2] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
FISCHER, R
MORKOC, H
THORNE, RE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1238 - 1240
[3] KASTALSKY A, UNPUB
[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[5] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
LANG, DV
LOGAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639
[6] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES
LIN, BJF
TSUI, DC
PAALANEN, MA
GOSSARD, AC
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 695 - 697
[7] PERSISTENT PHOTO-CONDUCTANCE AND PHOTOQUENCHING OF SELECTIVELY DOPED AL0.3GA0.7AS GAAS HETEROJUNCTIONS
NATHAN, MI
JACKSON, TN
KIRCHNER, PD
MENDEZ, EE
PETTIT, GD
WOODALL, JM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (04) : 719 - 725
[8] QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE
NICHOLAS, RJ
BRUMMELL, MA
PORTAL, JC
RAZEGHI, M
POISSON, MA
[J]. SOLID STATE COMMUNICATIONS, 1982, 43 (11) : 825 - 828
[9] LOW-PRESSURE MOCVD GROWTH OF GA0.47IN0.53AS-INP HETEROJUNCTION AND SUPER-LATTICES
RAZEGHI, M
DUCHEMIN, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 262 - 265
[10] STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604

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