PERSISTENT PHOTO-CONDUCTANCE AND PHOTOQUENCHING OF SELECTIVELY DOPED AL0.3GA0.7AS GAAS HETEROJUNCTIONS

被引：23

作者：

NATHAN, MI

JACKSON, TN

KIRCHNER, PD

MENDEZ, EE

PETTIT, GD

WOODALL, JM

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 04期

关键词：

D O I：

10.1007/BF02676799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：719 / 725

页数：7

共 14 条

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CHO, AY .

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[4]

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[6]

LIN AL, 1976, J APPL PHYS, V47, P1859, DOI 10.1063/1.322905

[7]

MATSUMOTO J, 1982, APPL PHYS LETT, V41, P1075

[8] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) :L913-L916

[9] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J].

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[10]

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