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MASS-SPECTROMETRIC INVESTIGATION OF GAS SWITCHING IN AN INGAASP MOVPE SYSTEM
被引:12
作者
:
HASPEKLO, H
论文数:
0
引用数:
0
h-index:
0
机构:
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
HASPEKLO, H
[
1
]
KONIG, U
论文数:
0
引用数:
0
h-index:
0
机构:
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
KONIG, U
[
1
]
HEYEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
HEYEN, M
[
1
]
JURGENSEN, H
论文数:
0
引用数:
0
h-index:
0
机构:
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
JURGENSEN, H
[
1
]
机构
:
[1]
AIXTRON GMBH,D-5100 AACHEN,FED REP GER
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1986年
/ 77卷
/ 1-3期
关键词
:
D O I
:
10.1016/0022-0248(86)90285-X
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:79 / 84
页数:6
相关论文
共 6 条
[1]
QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
KOLBAS, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
KOLBAS, RM
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DAPKUS, PD
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(02)
: 170
-
186
[2]
ON THE EFFECT OF CARRIER GAS ON GROWTH-CONDITIONS IN MOCVD REACTORS - RAMAN-STUDY OF LOCAL TEMPERATURE
KOPPITZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
KOPPITZ, M
VESTAVIK, O
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
VESTAVIK, O
PLETSCHEN, W
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
PLETSCHEN, W
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
MIRCEA, A
HEYEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
HEYEN, M
RICHTER, W
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RICHTER, W
[J].
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
: 136
-
141
[3]
METALORGANIC INP AND INXGA1-XASYP1-Y ON INP EPITAXY AT ATMOSPHERIC-PRESSURE
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
MIRCEA, A
AZOULAY, R
论文数:
0
引用数:
0
h-index:
0
AZOULAY, R
DUGRAND, L
论文数:
0
引用数:
0
h-index:
0
DUGRAND, L
MELLET, R
论文数:
0
引用数:
0
h-index:
0
MELLET, R
RAO, K
论文数:
0
引用数:
0
h-index:
0
RAO, K
SACILOTTI, M
论文数:
0
引用数:
0
h-index:
0
SACILOTTI, M
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(03)
: 603
-
620
[4]
NISHIZAWA J, 1986, INT C PROCESSING ELE
[5]
RAZEGHI M, 1985, SEMICONDUCTORS SEMIM, V32
[6]
MASS-SPECTROMETRIC STUDY OF GA(CH3)3 AND GA(C2H5)3 DECOMPOSITION REACTION IN H-2 AND N-2
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
YOSHIDA, M
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
WATANABE, H
UESUGI, F
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
UESUGI, F
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(03)
: 677
-
679
←
1
→
共 6 条
[1]
QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
KOLBAS, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
KOLBAS, RM
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DAPKUS, PD
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(02)
: 170
-
186
[2]
ON THE EFFECT OF CARRIER GAS ON GROWTH-CONDITIONS IN MOCVD REACTORS - RAMAN-STUDY OF LOCAL TEMPERATURE
KOPPITZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
KOPPITZ, M
VESTAVIK, O
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
VESTAVIK, O
PLETSCHEN, W
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
PLETSCHEN, W
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
MIRCEA, A
HEYEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
HEYEN, M
RICHTER, W
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
RICHTER, W
[J].
JOURNAL OF CRYSTAL GROWTH,
1984,
68
(01)
: 136
-
141
[3]
METALORGANIC INP AND INXGA1-XASYP1-Y ON INP EPITAXY AT ATMOSPHERIC-PRESSURE
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
MIRCEA, A
AZOULAY, R
论文数:
0
引用数:
0
h-index:
0
AZOULAY, R
DUGRAND, L
论文数:
0
引用数:
0
h-index:
0
DUGRAND, L
MELLET, R
论文数:
0
引用数:
0
h-index:
0
MELLET, R
RAO, K
论文数:
0
引用数:
0
h-index:
0
RAO, K
SACILOTTI, M
论文数:
0
引用数:
0
h-index:
0
SACILOTTI, M
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(03)
: 603
-
620
[4]
NISHIZAWA J, 1986, INT C PROCESSING ELE
[5]
RAZEGHI M, 1985, SEMICONDUCTORS SEMIM, V32
[6]
MASS-SPECTROMETRIC STUDY OF GA(CH3)3 AND GA(C2H5)3 DECOMPOSITION REACTION IN H-2 AND N-2
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
YOSHIDA, M
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
WATANABE, H
UESUGI, F
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
NEC CORP,OPTO ELECTR RES LABS,MIYAMAE,KAWASAKI 213,JAPAN
UESUGI, F
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(03)
: 677
-
679
←
1
→