HG1-XCDXTE SURFACE AFTER CHEMICAL ETCHING AND ELECTROCHEMICAL REDUCTION

被引:8
作者
SHIMANOE, K
SAKASHITA, M
机构
[1] Technology Research Laboratories, Nippon Steel Corporation, Kawasaki, 211, Ida 1618, Nakahara-ku
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期
关键词
MERCURY CADMIUM TELLURIDE; X-RAY PHOTOELECTRON SPECTROSCOPY; ELECTROCHEMICAL REDUCTION; CHEMICAL ETCHING; SURFACE TREATMENT; DEPTH PROFILE; SURFACE STABILITY;
D O I
10.1143/JJAP.30.2723
中图分类号
O59 [应用物理学];
学科分类号
摘要
Surface compositions of Hg1-xCdxTe (MCT) after chemical etching and electrochemical reduction have been studied with an angle-dependent X-ray photoelectron spectroscopy (XPS) technique. The degree of oxidation formed after the chemical etching in Br2-methanol solutions is dependent on Br2 concentration but independent of etching time. The etched surface is Te-rich. The cation fraction x deviates from that of the bulk value. The oxides and accumulated elemental Te are eliminated from the etched surface by the reduction at -0.9 V vs Ag/AgCl for 1 h in pH 5.0 acetic-acetate solution. The cation/anion ratio and cation fraction x approach the bulk value and are constant in the depth. Furthermore, it is confirmed that the electrochemically reduced surface is more stable in atmospheric oxygen than the chemically etched MCT. This electrochemical reduction is used for treatment prior to surface passivation.
引用
收藏
页码:2723 / 2729
页数:7
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