PRESSURE-TUNED GAAS DIODE-LASER ABSORPTION SPECTROSCOPY OF XENON HYPERFINE-STRUCTURE

被引：11

作者：

PINE, AS ^{[1
]}

GLASSBRE.CJ ^{[1
]}

KAFALAS, JA ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1973年 / QE 9卷 / 08期

关键词：

D O I：

10.1109/JQE.1973.1077753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：800 / 807

页数：8

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