ELECTRICAL STUDIES OF NEUTRON-IRRADIATED N-TYPE SI - DEFECT STRUCTURE AND ANNEALING

[1] BASS RF, 1966, B AM PHYS SOC, V11, P193

[2] EVIDENCE FOR DAMAGE REGIONS IN SI GAAS AND INSB SEMICONDUCTORS BOMBARDED WITH HIGH-ENERGY NEUTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2645 - +

[3] OBSERVATION OF DAMAGE REGIONS IN N-TYPE GERMANIUM BY MEANS OF A CHEMICAL ETCH [J]. NUOVO CIMENTO, 1963, 29 (05): : 1200 - +

[4] BERTOLOTTI M, 1966, AUG INT S LATT DEF S

[5] BINDER D, AFWLTR6641 AIR FORC, V1, P55

[6] BINDER D, 1966, JUL IEEE C NUCL SPAC

[7] CLELAND JW, 1961 P INT C SEM PHY, P299

[8] DRIFT MOBILITY IN NEUTRON IRRADIATED N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1693 - 1693

[9] CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294

[10] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2, P67

[1] BASS RF, 1966, B AM PHYS SOC, V11, P193

[2] EVIDENCE FOR DAMAGE REGIONS IN SI GAAS AND INSB SEMICONDUCTORS BOMBARDED WITH HIGH-ENERGY NEUTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2645 - +

[3] OBSERVATION OF DAMAGE REGIONS IN N-TYPE GERMANIUM BY MEANS OF A CHEMICAL ETCH [J]. NUOVO CIMENTO, 1963, 29 (05): : 1200 - +

[4] BERTOLOTTI M, 1966, AUG INT S LATT DEF S

[5] BINDER D, AFWLTR6641 AIR FORC, V1, P55

[6] BINDER D, 1966, JUL IEEE C NUCL SPAC

[7] CLELAND JW, 1961 P INT C SEM PHY, P299

[8] DRIFT MOBILITY IN NEUTRON IRRADIATED N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1693 - 1693

[9] CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294

[10] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2, P67