STUDY OF COOLING OF HOT CARRIERS AND INTERVALLEY SCATTERING IN IN0.53GA0.47AS BY SUBPICOSECOND RAMAN-SCATTERING

被引:13
作者
KIM, DS [1 ]
YU, PY [1 ]
机构
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT & CHEM SCI, BERKELEY, CA 94720 USA
关键词
D O I
10.1063/1.103133
中图分类号
O59 [应用物理学];
学科分类号
摘要
Subpicosecond laser pulses have been used to excite and probe photoexcited hot-electron plasma in In0.53 Ga0.47 As by Raman scattering. Hot-electron temperatures have been measured as a function of the length of subpicosecond pulses. Cooling of the hot electrons is compared with a model calculation in which the cooling mechanism is dominated by intervalley scattering. The Γ to L intervalley deformation potential in In 0.53 Ga0.47 As was determined to be around 3.5×108 eV/cm.
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页码:1570 / 1572
页数:3
相关论文
共 19 条
[1]  
[Anonymous], COMMUNICATION
[2]   MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION [J].
CHENG, KY ;
CHO, AY ;
CHRISTMAN, SB ;
PEARSALL, TP ;
ROWE, JE .
APPLIED PHYSICS LETTERS, 1982, 40 (05) :423-425
[3]   GENERATION OF NONEQUILIBRIUM OPTICAL PHONONS IN GAAS AND THEIR APPLICATION IN STUDYING INTERVALLEY ELECTRON-PHONON SCATTERING [J].
COLLINS, CL ;
YU, PY .
PHYSICAL REVIEW B, 1984, 30 (08) :4501-4515
[4]   HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J].
CONWELL, EM ;
VASSELL, MO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :22-+
[5]   FEMTOSECOND COLLISION TIMES OF HOT-ELECTRONS IN GAAS DETERMINED BY PICOSECOND TIME-RESOLVED LIGHT-SCATTERING [J].
HUANG, Y ;
YU, PY .
SOLID STATE COMMUNICATIONS, 1987, 63 (02) :109-111
[6]  
Hulin D., 1987, 18th International Conference on the Physics of Semiconductors, P1279
[7]   1ST-PRINCIPLES THEORY OF QUASIPARTICLES - CALCULATION OF BAND-GAPS IN SEMICONDUCTORS AND INSULATORS [J].
HYBERTSEN, MS ;
LOUIE, SG .
PHYSICAL REVIEW LETTERS, 1985, 55 (13) :1418-1421
[8]  
Kash J. A., 1987, 18th International Conference on the Physics of Semiconductors, P1287
[9]  
KIM D, UNPUB
[10]  
Klein M., 1975, TOP APPL PHYS, V8, P148