POWER-INDEPENDENT DEGRADATION OF HIGH-POWER GAALAS LASERS WITH NONABSORBING MIRRORS

被引：7

作者：

NAITO, H

KUME, M

HAMADA, K

SHIMIZU, H

KAZUMURA, M

KANO, G

TERAMOTO, I

机构：

[1] Electronics Research Laboratory, Matsushita, Electronics Corporation, Takatsuki, Osaka

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期

关键词：

D O I：

10.1109/3.89976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability of high-power single-mode GaAlAs lasers with nonabsorbing mirrors was investigated in detail. The lasers were tested at various output powers and temperatures. The results indicate that the degradation of the lasers is dependent not on the output power, but only on the operating current and temperature. The thermal activation energy of the degradation rate is estimated to be 0.85 eV, from which the lifetime under 100 mW operation at 25-degrees-C is expected to exceed 100 000 h.

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页码：1550 / 1554

页数：5

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