SINGLE-SOURCE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION PROCESS FOR SULFIDE THIN-FILMS - INTRODUCTION OF A NEW ORGANOMETALLIC PRECURSOR BUNIN(SPRI)2 AND PREPARATION OF IN2S3 THIN-FILMS

被引:73
作者
NOMURA, R
KONISHI, K
MATSUDA, H
机构
[1] Department of Applied Chemistry, Faculty of Engineering, Osaka University, Suita, Osaka, 565, Yamada-Oka
关键词
D O I
10.1016/0040-6090(91)90351-W
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single-source organometallic chemical vapour deposition was successfully introduced using Bu(n)In(SPr(i)2 as a precursor molecule and tetragonal beta-In2S3 thin layers with a strongly preferred (103) growth orientation were obtained on Si(111) and quartz substrates at a substrate temperature T(sub) of 300-400-degrees-C. A dependence of growth rate that lay between 25 and 450 nm h-1 on source temperature T(source) (60-80-degrees-C) and on T(sub) was observed. beta-In2S3 thin films thus obtained were photoresponsive, with optical band gap energies and dark conductivity estimated as 1.98 eV and 2.0 x 10(-4) S cm-1 respectively. Furthermore, a polycrystalline In6S7 layer, which is one of the sulphur-deficient phases of indium sulphide, was grown when T(sub) was raised to 450-degrees-C in the same single-source system.
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页码:339 / 345
页数:7
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