HALL CONDUCTIVITY IN N-TYPE SILICON INVERSION-LAYERS UNDER STRONG MAGNETIC-FIELDS

被引：25

作者：

WAKABAYASHI, J

KAWAJI, S

机构：

来源：

SURFACE SCIENCE | 1980年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(80)90510-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：299 / 307

页数：9

共 17 条

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[9] ELECTRON LOCALIZATION IN SILICON INVERSION LAYERS UNDER STRONG MAGNETIC-FIELDS [J].

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[10] QUANTUM GALVANOMAGNETIC PROPERTIES OF N-TYPE INVERSION LAYERS ON SI(100) MOSFET [J].

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