HYDROGEN CONTENT OF AMORPHOUS SILICON-CARBIDE PREPARED BY REACTIVE SPUTTERING - EFFECTS ON FILMS PROPERTIES

被引：79

作者：

GUIVARCH, A ^{[1
]}

RICHARD, J ^{[1
]}

LECONTELLEC, M ^{[1
]}

LIGEON, E ^{[1
]}

FONTENILLE, J ^{[1
]}

机构：

[1] CEN,DRF,F-38041 GRENOBLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.327891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2167 / 2174

页数：8

共 24 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16
[2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[3] INFLUENCE OF ION-BEAM BOMBARDMENT IN HYDROGEN SURFACE-LAYER ANALYSIS
BUGEAT, JP
LIGEON, E
[J]. NUCLEAR INSTRUMENTS & METHODS, 1979, 159 (01): : 117 - 124
[4] REACTIVE PLASMA DEPOSITED SIXCYHZ FILMS
CATHERINE, Y
TURBAN, G
[J]. THIN SOLID FILMS, 1979, 60 (02) : 193 - 200
[5] CATHERINE Y, 1977, 3RD INT S PLASM CHEM
[6] PHOTO-LUMINESCENCE IN AMORPHOUS SYSTEM SIXC1-X
ENGEMANN, D
FISCHER, R
KNECHT, J
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 567 - 568
[7] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON
FREEMAN, EC
PAUL, W
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4288 - 4300
[8] GUIVARCH A, UNPUBLISHED
[9] HENRY L, 1976, VIDE, V183, P101
[10] LANDFORD WA, 1978, J APPL PHYS, V49, P2473