STRUCTURE AND ENERGY-LEVELS OF THE GLIDE 60-DEGREES PARTIAL IN SILICON

被引：16

作者：

JONES, R ^{[1
]}

MARKLUND, S ^{[1
]}

机构：

[1] UMEA UNIV,DEPT THEORET PHYS,S-90187 UMEA,SWEDEN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 101卷 / 02期

关键词：

D O I：

10.1002/pssb.2221010217

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：585 / 589

页数：5

共 16 条

[1] ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60DEGREES DISLOCATION IN SILICON [J].

ALSTRUP, I ;

MARKLUND, S .

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OURMAZD, A ;

DARBY, DB .

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[4] STRUCTURE AND ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS [J].

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JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :3-12

[5] RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS [J].

HIRSCH, PB .

JOURNAL DE PHYSIQUE, 1979, 40 :27-32

[6] ELECTRONIC STATES ASSOCIATED WITH 60DEGREES EDGE DISLOCATION IN SILICON [J].

JONES, R .

PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :57-64

[7] THEORETICAL CALCULATIONS OF ELECTRON-STATES ASSOCIATED WITH DISLOCATIONS [J].

JONES, R .

JOURNAL DE PHYSIQUE, 1979, 40 :33-38

[8]

JONES R, UNPUBLISHED

[9] DISLOCATION MODEL OF AMORPHOUS-GERMANIUM [J].

KOIZUMI, H ;

NINOMIYA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 44 (03) :898-904

[10] ON THE CORE STRUCTURE OF THE GLIDE-SET 9-DEGREES AND 3-DEGREES PARTIAL DISLOCATIONS IN SILICON [J].

MARKLUND, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01) :77-85

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