STRUCTURE AND ENERGY-LEVELS OF THE GLIDE 60-DEGREES PARTIAL IN SILICON

被引：16

作者：

JONES, R ^{[1
]}

MARKLUND, S ^{[1
]}

机构：

[1] UMEA UNIV,DEPT THEORET PHYS,S-90187 UMEA,SWEDEN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 101卷 / 02期

关键词：

D O I：

10.1002/pssb.2221010217

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：585 / 589

页数：5

共 16 条

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MARKLUND, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (01) :83-89

[13] ATOMIC DENSITIES OF STATES NEAR SI (111) SURFACES [J].

PANDEY, KC ;

PHILLIPS, JC .

PHYSICAL REVIEW B, 1976, 13 (02) :750-760

[14] ENERGY-SPECTRA OF DISLOCATIONS IN SILICON AND GERMANIUM [J].

SCHROTER, W ;

SCHEIBE, E ;

SCHOEN, H .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :23-34

[15]

TEICHLER H, COMMUNICATION

[16] EPR OF DISLOCATIONS IN SILICON [J].

WEBER, E ;

ALEXANDER, H .

JOURNAL DE PHYSIQUE, 1979, 40 :101-106