ENERGY-SPECTRA OF DISLOCATIONS IN SILICON AND GERMANIUM

被引：36

作者：

SCHROTER, W ^{[1
]}

SCHEIBE, E ^{[1
]}

SCHOEN, H ^{[1
]}

机构：

[1] UNIV GOTTINGEN,BEREICH SONDERFORSCH,D-3400 GOTTINGEN,FED REP GER

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00242.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：23 / 34

页数：12

共 34 条

[1]

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ALEXANDER, H .

JOURNAL DE PHYSIQUE, 1979, 40 :1-6

[3]

ALEXANDER H, 1979, COMMUNICATION

[4] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J].

COCKAYNE, DJ ;

RAY, ILF ;

WHELAN, MJ .

PHILOSOPHICAL MAGAZINE, 1969, 20 (168) :1265-&

[5] DEFECT STATES IN AMORPHOUS SILICON [J].

ELLIOTT, SR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :325-334

[6]

ERDMANN R, UNPUBLISHED

[7] INVESTIGATION OF ENERGY-SPECTRUM AND KINETIC PHENOMENA IN DISLOCATED SI CRYSTALS .1. [J].

GRAZHULIS, VA ;

KVEDER, VV ;

MUKHINA, VY .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 43 (02) :407-415

[8] THEORETICAL CALCULATIONS OF ELECTRON-STATES ASSOCIATED WITH DISLOCATIONS [J].

JONES, R .

JOURNAL DE PHYSIQUE, 1979, 40 :33-38

[9] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J].

KIMERLING, LC ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :73-75

[10]

Labusch R., 1978, DISLOCATIONS SOLIDS, V5

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