TOWARD EPITAXIAL-GROWTH OF CUGAS2 ON GAAS(001) SUBSTRATES BY CHLORIDE CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

PU, YS

KATO, T

MATSUMOTO, T

机构：

[1] Department of Electronic Engineering, Yamanashi University, Kofu

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 10期

关键词：

CUGAS2; CHALCOPYRITE SEMICONDUCTOR; EPITAXIAL GROWTH; CHLORIDE CVD;

D O I：

10.1143/JJAP.31.3420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth conditions for achieving epitaxy of CuGaS2 on GaAs (001) substrates by chloride chemical vapor deposition have been discussed, The a-axis growth, which should be excluded for epitaxial growth, was suppressed by lowering substrate temperatures and by reducing carrier gas flow rates during a heating up period before the beginning of layer growth.

引用

页码：3420 / 3421

页数：2

共 4 条

[1] EPITAXIAL-GROWTH OF CUGAS2 BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].