CHARACTERIZATION OF TANTALUM IMPURITIES IN HOT-FILAMENT DIAMOND LAYERS

被引：15

作者：

GRIESSER, M

STINGEDER, G

GRASSERBAUER, M

BAUMANN, H

LINK, F

WURZINGER, P

LUX, H

HAUBNER, R

LUX, B

机构：

[1] JOHANN WOLFGANG GOETHE UNIV,INST NUCL PHYS,D-60684 FRANKFURT,GERMANY

[2] VIENNA TECH UNIV,INST APPL & TECH PHYS,A-1040 VIENNA,AUSTRIA

[3] VIENNA TECH UNIV,INST MAT ELECT ENGN,A-1040 VIENNA,AUSTRIA

[4] TECH UNIV VIENNA,INST CHEM TECHNOL INORGAN MAT,A-1060 VIENNA,AUSTRIA

来源：

基金：

奥地利科学基金会;

关键词：

D O I：

10.1016/0925-9635(94)90240-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During hot-filament diamond deposition metal impurities (e.g. tantalum) can evaporate from the filament. The incorporation of tantalum in diamond films was studied as a function of process conditions using secondary ion mass spectrometry, Rutherford backscattering spectrometry and transmission electron microscopy. It was found that the tantalum concentration depends on the initial carburization status of the filament, its temperature and the diamond growth rate. If diamond deposition is started with metallic tantalum filaments, TaC nanoprecipitates are formed at the interface.

引用

页码：638 / 644

页数：7

共 25 条

[1]

BENNINGHOVEN A, 1987, SECONDARY ION MASS S, V68

[2]

Bichler R, 1989, HIGH TEMP HIGH PRESS, V21, P576

[3] DIAMOND CHEMICAL-VAPOR-DEPOSITION USING TANTALUM FILAMENTS IN H2-CH4-O2 GAS-MIXTURES [J].