ELECTRON BOMBARDMENT DAMAGE IN SILICON ESAKI DIODES

被引：15

作者：

LOGAN, RA

GILBERT, JF

AUGUSTYNIAK, WM

机构：

来源：

关键词：

D O I：

10.1063/1.1736205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1201 / &

共 17 条

[1] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J].

BEMSKI, G ;

AUGUSTYNIAK, WM .

PHYSICAL REVIEW, 1957, 108 (03) :645-648

[2] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

[3]

BEMSKI G, PRIV COMMUNICATIONS

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].

CHYNOWETH, A ;

LOGAN, RA ;

FELDMANN, WL .

PHYSICAL REVIEW, 1961, 121 (03) :684-&

[5]

CLAASSEN RS, 1960, BULL AM PHYS SOC, V5, P406

[6] ELECTRON BOMBARDMENT OF SILICON [J].

HILL, DE .

PHYSICAL REVIEW, 1959, 114 (06) :1414-1420

[7]

HILL DE, 1956, BULL AM PHYS SOC, V1, P321

[8] THEORY OF TUNNELING [J].

KANE, EO .

[9]

LONGO TA, 1960, B AM PHYS SOC, V5, P160

[10]

SAH CT, 1960, B AM PHYS SOC, V5, P507