PARTIAL SWITCHING KINETICS OF FERROELECTRIC PBZRXTI1-XO3 THIN-FILMS PREPARED BY SOL-GEL TECHNIQUE

Switching characteristics of ferroelectric PbZrxTi1-xO3 thin films prepared by the sol-gel technique have been studied for ''adaptive learning'' metal-ferroelectric-semiconductor field effect transistor (MFSFET) applications. It is demonstrated that by applying positive short pulses to the metal-ferroelectric-metal (MFM) capacitors, the polarization of PZT films can be gradually reversed. We have also measured the switching characteristics by applying various input voltages. Experimentally measured current responses and polarization changes can be well fitted by the Kolmogorov-Avrami theory by taking into account the voltage dependence of the reversed polarization.