OPTICALLY TRIGGERABLE DOMAINS IN GAAS GUNN DIODES

被引：17

作者：

ADAMS, RF

SCHULTE, HJ

机构：

[1] Bell Telephone Laboratories

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 08期

关键词：

D O I：

10.1063/1.1652994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Illumination of an epitaxial Gunn diode in the anode and central active region with the 1-nsec light pulse from a mode-locked HeSingle Bond signNe laser has been observed to trigger a single domain when the diode is biased just below threshold. Cathode illumination of a diode biased above threshold has been observed to inhibit domain nucleation. © 1969 The American Institute of Physics.

引用

页码：265 / &

共 4 条

[1]

HAYDL WH, 1968, IEEE T ELECTRON DEVI, VED15, P941

[2] MULTIMODE OPERATION IN GUNN OSCILLATORS INDUCED BY COOLING AND ILLUMINATION [J].

SEWELL, KG ;

BOATNER, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1228-+

[3] ELECTRO-OPTIC OBSERVATION OF MOVING HIGH FIELD DOMAINS IN HIGH RESISTIVITY GAAS [J].

SHIRAFUJI, J .

SOLID-STATE ELECTRONICS, 1968, 11 (10) :983-+

[4] CURRENT OSCILLATIONS BY 2 BULK NEGATIVE-RESISTANCE EFFECTS IN PHOTOEXCITED GAAS [J].

TOKUMARU, Y .

APPLIED PHYSICS LETTERS, 1969, 14 (07) :212-&

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