REACTIVE ION ETCHING OF GAAS WITH CCL2F2-O2 - ETCH RATES, SURFACE-CHEMISTRY, AND RESIDUAL DAMAGE

被引：52

作者：

PEARTON, SJ

VASILE, MJ

JONES, KS

SHORT, KT

LANE, E

FULLOWAN, TR

VONNEIDA, AE

HAEGEL, NM

机构：

[1] UNIV FLORIDA, GAINESVILLE, FL 32611 USA

[2] UNIV CALIF LOS ANGELES, LOS ANGELES, CA 90024 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1281 / 1292

页数：12

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