PHOTOCONDUCTIVITY IN NEUTRON-IRRADIATED PARA-TYPE SI

被引：7

作者：

CHENG, LJ

SWANSON, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 06期

关键词：

D O I：

10.1063/1.1659273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2627 / &

共 29 条

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[6] 3.9MU PHOTOCONDUCTIVITY BAND IN NEUTRON-IRRADIATED P-TYPE SILICON [J].

CHENG, LJ .

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[7]

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[8]

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[9]

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[10] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

FAN, HY ;

RAMDAS, AK .

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