7AUTO-PHOTOVOLTAIC MEASUREMENT OF ABSORPTION-COEFFICIENT AND DIFFUSION LENGTHS OF LIGHT EMITTING DIODES

被引:1
作者
FULOP, W
KONIDARIS, S
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D O I
10.1016/0038-1101(72)90030-5
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:923 / +
页数:1
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共 10 条
[1]   PHOTOVOLTAIC EFFECT IN P-N JUNCTIONS [J].
CUMMEROW, RL .
PHYSICAL REVIEW, 1954, 95 (01) :16-21
[3]   EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES [J].
GALGINAITIS, SV .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :295-&
[4]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) :658-&
[5]   EFFECTS OF DRIFT FIELDS AND FIELD GRADIENTS ON QUANTUM EFFICIENCY OF PHOTOCELLS [J].
JAIN, GC ;
ALRIFAI, RMS .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :768-&
[6]   SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].
LASHER, G ;
STERN, F .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&
[7]  
LOFERSKI JJ, 1959, METHODS EXPERIMENTAL, V6, P365
[8]  
LORENZ MR, 1969, T METALL SOC AIME, V245, P539
[9]  
Peters J. R., 1969, Journal of Physics E (Scientific Instruments), V2, P657, DOI 10.1088/0022-3735/2/8/315
[10]   GALLIUM ARSENIDE-PHOSPHIDE VISIBLE LAMPS AND ARRAYS [J].
PETERS, JR ;
STEWART, CEE .
RADIO AND ELECTRONIC ENGINEER, 1970, 39 (05) :275-+