ABINITIO (GAAS)3(ALAS)3 (001) SUPERLATTICE CALCULATIONS - BAND OFFSETS AND FORMATION ENTHALPY

被引：95

作者：

BYLANDER, DM

KLEINMAN, L

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.36.3229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：3229 / 3236

页数：8

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共 20 条

[1] ELECTRICAL CHARACTERIZATION OF GAAS/ALGAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR CAPACITORS AND APPLICATION TO THE MEASUREMENT OF THE GAAS/ALGAAS BAND-GAP DISCONTINUITY
ARNOLD, D
KETTERSON, A
HENDERSON, T
KLEM, J
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2880 - 2885
[2] PROBING SEMICONDUCTOR SEMICONDUCTOR INTERFACES
BAUER, RS
MARGARITONDO, G
[J]. PHYSICS TODAY, 1987, 40 (01) : 27 - 34
[3] SELF-CONSISTENT ENERGY-BANDS AND FORMATION ENERGY OF THE (GAAS)1(ALAS)1(001) SUPERLATTICE
BYLANDER, DM
KLEINMAN, L
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5280 - 5286
[4] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[5] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES
FRENSLEY, WR
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 810 - 815
[6] Harrison W. A., 1980, ELECTRONIC STRUCTURE, P253
[7] ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WELL AND SAWTOOTH SUPERLATTICES
JAROS, M
WONG, KB
GELL, MA
[J]. PHYSICAL REVIEW B, 1985, 31 (02): : 1205 - 1207
[8] EFFICACIOUS FORM FOR MODEL PSEUDOPOTENTIALS
KLEINMAN, L
BYLANDER, DM
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (20) : 1425 - 1428
[9] KROEMER H, 1985, 1983 P NATO ADV STUD
[10] ATOMIC ENERGY LEVELS FOR THE THOMAS-FERMI AND THOMAS-FERMI-DIRAC POTENTIAL
LATTER, R
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 510 - 519