ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WELL AND SAWTOOTH SUPERLATTICES

被引：85

作者：

JAROS, M

WONG, KB

GELL, MA

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.31.1205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1205 / 1207

页数：3

共 7 条

[1] NEW TRANSIENT ELECTRICAL-POLARIZATION PHENOMENON IN SAWTOOTH SUPER-LATTICES
CAPASSO, F
LURYI, S
TSANG, WT
BETHEA, CG
LEVINE, BF
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (25) : 2318 - 2321
[2] GELL MA, UNPUB J PHYS C
[3] NEW ELECTRON-STATES IN GAAS-GAXAL1-XAS SUPERLATTICE
JAROS, M
WONG, KB
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (29): : L765 - L769
[4] Jaros M, 1982, DEEP LEVELS SEMICOND
[5] THE ELECTRONIC-STRUCTURE AND STABILITY OF LOCALIZED DEFECTS IN SEMICONDUCTORS .1. THEORY
KIRTON, MJ
BANKS, PW
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (14): : 2475 - 2486
[6] WONG KB, UNPUB J PHYS C
[7] INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 DIFFERENT SEMICONDUCTORS
ZHU, QG
KROEMER, H
[J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3519 - 3527