INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 DIFFERENT SEMICONDUCTORS

被引：259

作者：

ZHU, QG

KROEMER, H

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.27.3519

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：3519 / 3527

页数：9

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共 18 条

[1] EFFECTIVE-MASS THEORY OF SEMICONDUCTOR HETEROJUNCTIONS AND SUPER-LATTICES
ANDO, T
MORI, S
[J]. SURFACE SCIENCE, 1982, 113 (1-3) : 124 - 130
[2] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD
ANDREONI, W
CAR, R
[J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3334 - 3344
[3] PSEUDOPOTENTIAL CALCULATIONS FOR (GAAS)1-(ALAS)1 AND RELATED MONOLAYER HETEROSTRUCTURES
CARUTHERS, E
LINCHUNG, PJ
[J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2705 - 2718
[4] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21
[5] FRIEDMAN B, 1956, PRINCIPLES TECHNIQUE, P174
[6] HALL W, COMMUNICATION
[7] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW
HARRISON, WA
[J]. PHYSICAL REVIEW, 1961, 123 (01): : 85 - &
[8] ELECTRONIC-STRUCTURE OF THE [001] INAS-GASB SUPER-LATTICE
IHM, J
LAM, PK
COHEN, ML
[J]. PHYSICAL REVIEW B, 1979, 20 (10): : 4120 - 4125
[9] ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS
KROEMER, H
ZHU, QG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 551 - 553
[10] ELECTRONIC-STRUCTURE OF INAS-GASB(001) SUPER-LATTICES - 2 DIMENSIONAL EFFECTS
MADHUKAR, A
NUCHO, RN
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (04) : 331 - 336