FABRICATION OF GAAS QUANTUM WIRES ON EPITAXIALLY GROWN V-GROOVES BY METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION

被引：166

作者：

TSUKAMOTO, S ^{[1
]}

NAGAMUNE, Y ^{[1
]}

NISHIOKA, M ^{[1
]}

ARAKAWA, Y ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MEGURO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 01期

关键词：

D O I：

10.1063/1.350695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Successful fabrication of thin GaAs quantum wires (120-200 angstrom) x (200-300 angstrom) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.

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页码：533 / 535

页数：3

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