A NOVEL VUV PHOTOCHEMICAL DEPOSITION APPARATUS

被引:8
作者
MANFREDOTTI, C
FIZZOTTI, F
BOERO, M
PIATTI, G
机构
[1] Experimental Physics Department, University of Torino, 10125 Torino
关键词
Chemical equipment - Films - Photochemical reactions;
D O I
10.1016/0169-4332(93)90493-U
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new photo-CVD apparatus has been built in order to deposit a-Si:H films and other kinds of amorphous thin films by a technique which is both simple and versatile. This apparatus is composed of three chambers connected together: a load-lock chamber, a process chamber and a third chamber for in-situ analysis of deposited films. A peculiarity of the lamp, a dielectric discharge lamp which can work with noble gases like Xe or Kr, is that it can be completely dismounted without breaking the vacuum in order to clean the optical MgF2 window. By this method, the deposition chamber can be kept very clean. In this apparatus, we started to deposit a-SixC1-x:H of very good quality. These films have been completely characterized by chemical (RBS, ERDA) and optical (PDS) methods. Their quality can be compared with that of a-Si:H samples of the same thickness, obtained by PECVD.
引用
收藏
页码:127 / 132
页数:6
相关论文
共 8 条
  • [1] ELLIASON B, 1988, APPL PHYS B, V46, P299
  • [2] FUYUKI T, 1987, INT PVSEC 3 TOKYO, P21
  • [3] KESSLER F, 1990, MATER RES SOC S P, V192, P99
  • [4] KONAGAI M, 1987, INT PVSEC 3 TOKYO, P15
  • [5] HIGH-QUALITY A-SI FILMS PREPARED BY THE DIRECT PHOTO-CVD METHOD
    NAKANO, S
    WAKISAKA, K
    KAMEDA, M
    ISOMURA, M
    MATSUYAMA, T
    NAKAMURA, N
    TSUDA, S
    OHNISHI, M
    KUWANO, Y
    [J]. AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 417 - 422
  • [6] NAKANO S, 1987, JPN J APPL PHYS, V26, P28
  • [7] LOW-TEMPERATURE VUV ENHANCED GROWTH OF THIN SILICON DIOXIDE FILMS
    PATEL, P
    BOYD, IW
    [J]. APPLIED SURFACE SCIENCE, 1990, 46 (1-4) : 352 - 356
  • [8] ROBERTSON PA, 1986, MATER RES SOC S P, V70, P31