NANOMETER-SCALE OXIDATION OF SI(100) SURFACES BY TAPPING MODE ATOMIC-FORCE MICROSCOPY

被引：85

作者：

PEREZMURANO, F ^{[1
]}

ABADAL, G ^{[1
]}

BARNIOL, N ^{[1
]}

AYMERICH, X ^{[1
]}

SERVAT, J ^{[1
]}

GOROSTIZA, P ^{[1
]}

SANZ, F ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT QUIM FIS,E-08028 BARCELONA,SPAIN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.360505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nanometer-scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip-to-sample distance. (C) 1995 American Institute of Physics.

引用

页码：6797 / 6801

页数：5

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PEREZMURANO F, UNPUB

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