SCANNING TUNNELING MICROSCOPE STIMULATED OXIDATION OF SILICON (100) SURFACES

被引：29

作者：

FAY, P ^{[1
]}

BROCKENBROUGH, RT ^{[1
]}

ABELN, G ^{[1
]}

SCOTT, P ^{[1
]}

AGARWALA, S ^{[1
]}

ADESIDA, I ^{[1
]}

LYDING, JW ^{[1
]}

机构：

[1] UNIV ILLINOIS, BECKMAN INST, URBANA, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 11期

关键词：

D O I：

10.1063/1.356629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.

引用

页码：7545 / 7549

页数：5

共 22 条

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