PLASMA-ENHANCED ETCHING OF TUNGSTEN AND TUNGSTEN SILICIDE IN CHLORINE-CONTAINING DISCHARGES

被引：15

作者：

FISCHL, DS

HESS, DW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期

关键词：

D O I：

10.1149/1.2100868

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2265 / 2269

页数：5

共 31 条

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