REACTIVE ION ETCHING OF TUNGSTEN FILMS SPUTTER DEPOSITED ON GAAS

被引：34

作者：

ADACHI, S ^{[1
]}

SUSA, N ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 12期

关键词：

D O I：

10.1149/1.2113707

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2980 / 2989

页数：10

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