A NEW GATE STRUCTURE VERTICAL-GAAS FET

被引：4

作者：

ADACHI, S ^{[1
]}

ANDO, S ^{[1
]}

ASAI, H ^{[1
]}

SUSA, N ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期

关键词：

D O I：

10.1109/EDL.1985.26120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：264 / 266

页数：3

共 11 条

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[7] SHORT-CHANNEL EFFECTS IN 0.5-MU-M SOURCE-DRAIN SPACED VERTICAL GAAS-FETS - A 1ST EXPERIMENTAL INVESTIGATION [J].

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :125-127

[8] IMPROVED DESIGN OF THE GALLIUM-ARSENIDE PERMEABLE BASE TRANSISTOR [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1348-1354

[9] A SELF-ALIGNED DUAL-GRATING GAAS PERMEABLE BASE TRANSISTOR [J].

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IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :270-272

[10] TRANSMISSION ELECTRON-MICROSCOPY OF GAAS PERMEABLE BASE TRANSISTOR STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].

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ECONOMOU, NP ;

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JOHNSON, GD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3554-3560

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