A SELF-ALIGNED DUAL-GRATING GAAS PERMEABLE BASE TRANSISTOR

被引：7

作者：

VOJAK, BA

MCCLELLAND, RW

LINCOLN, GA

CALAWA, AR

FLANDERS, DC

GEIS, MW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期

关键词：

D O I：

10.1109/EDL.1984.25914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：270 / 272

页数：3

共 9 条

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[2]

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[3] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].

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[4]

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[5]

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[6] SURFACE RELIEF STRUCTURES WITH LINEWIDTHS BELOW 2000A [J].

FLANDERS, DC ;

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SHAVER, DC .

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[7] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J].

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EFREMOW, NN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1043-1046

[8] TRANSMISSION ELECTRON-MICROSCOPY OF GAAS GROWN OVER SUBMICROMETER-PERIOD TUNGSTEN GRATINGS [J].

VOJAK, BA ;

SALERNO, JP .

APPLIED PHYSICS LETTERS, 1982, 41 (12) :1151-1153

[9] TRANSMISSION ELECTRON-MICROSCOPY OF GAAS PERMEABLE BASE TRANSISTOR STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].

VOJAK, BA ;

SALERNO, JP ;

FLANDERS, DC ;

ALLEY, GD ;

BOZLER, CO ;

NICHOLS, KB ;

MCCLELLAND, RW ;

ECONOMOU, NP ;

LINCOLN, GA ;

MURPHY, RA ;

LINDLEY, WT ;

JOHNSON, GD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3554-3560

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