TRANSMISSION ELECTRON-MICROSCOPY OF GAAS GROWN OVER SUBMICROMETER-PERIOD TUNGSTEN GRATINGS

被引:8
作者
VOJAK, BA
SALERNO, JP
机构
关键词
D O I
10.1063/1.93416
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1151 / 1153
页数:3
相关论文
共 11 条
[1]  
ALLEY GD, 1982, DEVICE RES C FT COLL
[2]   SINGLE-CRYSTAL GAAS FILMS ON AMORPHOUS SUBSTRATES BY THE CLEFT PROCESS [J].
BOZLER, CO ;
MCCLELLAND, RW ;
SALERNO, JP ;
FAN, JCC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :720-725
[3]   FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].
BOZLER, CO ;
ALLEY, GD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141
[4]  
BOZLER CO, 1979, 7TH INT S GAAS REL C, P429
[5]   X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J].
FLANDERS, DC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1615-1619
[6]  
HAM WE, 1977, RCA REV, V38, P35
[7]  
HIRSCH P, 1977, ELECT MICROSCOPY THI, P229
[8]  
ROSENBERG J, 1982, IEEE MTT S DIGES JUN, P166
[9]   ADVANCES IN TRANSMISSION ELECTRON-MICROSCOPE TECHNIQUES APPLIED TO DEVICE FAILURE ANALYSIS [J].
SHENG, TT ;
MARCUS, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :737-743
[10]   NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].
SPICER, WE ;
CHYE, PW ;
SKEATH, PR ;
SU, CY ;
LINDAU, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433