ELECTRICAL TRANSPORT PROPERTIES OF POLYCRYSTALLINE P-TYPE INSB FILMS

被引：10

作者：

DAWAR, AL ^{[1
]}

KRISHNA, KV ^{[1
]}

TANEJA, OP ^{[1
]}

MATHUR, PC ^{[1
]}

机构：

[1] UNIV DELHI,DEPT PHYS & ASTROPHYS,DELHI 110007,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 47卷 / 02期

关键词：

D O I：

10.1002/pssa.2210470206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：375 / 378

页数：4

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[3]

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[4]

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[5] NOISE AND ELECTRICAL TRANSPORT PROPERTIES OF POLYCRYSTALLINE INSB THIN-FILMS [J].

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OI, T .

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[6]

TOLANSKY S, 1960, SURFACE MICROTOPOGRA

[7] HALL AND FIELD-EFFECT MOBILITY OF CDS FILMS SUBLIMED ON SAPPHIRE SUBSTRATES [J].

TYAGI, MS .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02) :609-617

[8] HALL MOBILITY OF ELECTRONS IN SPACE-CHARGE LAYER OF THIN FILM CDSE TRANSISTORS [J].

VANHEEK, HF .

SOLID-STATE ELECTRONICS, 1968, 11 (04) :459-&

[9] ELECTRON MOBILITY STUDIES IN SURFACE SPACE-CHARGE LAYERS IN VAPOR-DEPOSITED CDS FILMS [J].

WAXMAN, A ;

HENRICH, VE ;

SHALLCROSS, FV ;

BORKAN, H ;

WEIMER, PK .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :168-+

[10] STRUCTURE AND GALVANOMAGNETIC PROPERTIES OF 2-PHASE RECRYSTALLISED INSB-IN LAYERS [J].

WIEDER, HH ;

CLAWSON, AR .

SOLID-STATE ELECTRONICS, 1965, 8 (05) :467-&

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