FURTHER RESULTS ON THE AGING OF SILICON SCHOTTKY DIODES - INFLUENCE OF THE METAL

被引：11

作者：

PONPON, JP

SIFFERT, P

机构：

[1] Centre de Recherches Nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE)

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.325606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In a recently published paper we have emphasized the role of oxygen on the aging process arising in chemically etched silicon Schottky diodes. Complementary results which more accurately show the influence of the behavior of the metal electrodes with respect to oxygen are presented. A qualitative explanation of these observations is proposed.

引用

页码：5050 / 5051

页数：2