INTERFACE STUDIES OF METAL-SEMICONDUCTOR CONTACTS BY MEANS OF SIMS, NUCLEAR-REACTION AND RBS

被引:9
作者
PONPON, JP
GROB, JJ
GROB, A
STUCK, R
SIFFERT, P
机构
来源
NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期
关键词
D O I
10.1016/0029-554X(78)90944-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:647 / 651
页数:5
相关论文
共 19 条
[1]   7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J].
AMSEL, G ;
NADAI, JP ;
DARTEMAR.E ;
DAVID, D ;
GIRARD, E ;
MOULIN, J .
NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04) :481-&
[3]  
BADER R, 1968, Z NATURFORSCH A, V21, P1072
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]   ELASTIC SCATTERING OF ALPHA-PARTICLES BY OXYGEN [J].
CAMERON, JR .
PHYSICAL REVIEW, 1953, 90 (05) :839-844
[6]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[7]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
DAVIES, JA ;
DENHARTO.J ;
ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[8]   LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J].
HARRINGTON, WL ;
HONIG, RE ;
GOODMAN, AM ;
WILLIAMS, R .
APPLIED PHYSICS LETTERS, 1975, 27 (12) :644-645
[9]  
Jost W., 1960, DIFFUSION SOLIDS LIQ
[10]   OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE [J].
LUKES, F .
SURFACE SCIENCE, 1972, 30 (01) :91-&