ALUMINUM IMPLANTATION-INDUCED DISORDERING OF ALGAAS GAAS QUANTUM-WELL STRUCTURES

被引：3

作者：

BRADLEY, IV ^{[1
]}

WEISS, BL ^{[1
]}

ROBERTS, JS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1991年 / 23卷 / 07期

关键词：

D O I：

10.1007/BF00624973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The process of Al implantation-induced disordering of AlGaAs/GaAs quantum well structures has been studied for optical waveguide applications. A study of the implanted samples using photoluminescence demonstrates that disordering is primarily a damage-based process and that this process may be suitable for the fabrication of surface gratings.

引用

页码：S823 / S828

页数：6

共 5 条

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