HIGHLY PREFERRED [111] TEXTURE IN AL FILMS DEPOSITED ON ULTRATHIN METAL UNDERLAYERS

被引:16
作者
MITSUZUKA, T
机构
[1] Fundamental Research Laboratories, NEC Corporation, Miyamae-ku Kawasaki, 216
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9A期
关键词
AL FILMS; ION BEAM SPUTTERING; ELECTROMIGRATION; RHEED; X-RAY DIFFRACTION; UNDERLAYER;
D O I
10.1143/JJAP.31.L1280
中图分类号
O59 [应用物理学];
学科分类号
摘要
Al films on ultrathin metal underlayers 1-100 angstrom thick were fabricated on quartz and thermally oxidized Si substrates by the ion beam sputtering (IBS) technique. These Al films showed a highly preferred [111] texture and flat surfaces, as compared with the Al films deposited directly on the substrates. The texture in these Al films was related to the buffer layer structure and Al structure at the beginning of deposition. The metal underlayer textured into a double-rotated symmetry prevented the [111] texture of Al. The highly textured Al films had an amorphouslike structure at the beginning of Al deposition.
引用
收藏
页码:L1280 / L1283
页数:4
相关论文
共 6 条
[1]   THE THERMAL-STABILITY OF AL/TI-TA METALLIZATION ON SI [J].
BENTZUR, M ;
EIZENBERG, M ;
GREENBLATT, J .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) :3907-3914
[2]   ELECTROMIGRATION-INDUCED FAILURE BY EDGE DISPLACEMENT IN FINE-LINE ALUMINUM-0.5-PERCENT COPPER THIN-FILM CONDUCTORS [J].
ENGLISH, AT ;
KINSBRON, E .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :268-274
[3]   ELECTROMIGRATION IN AL/SIO2 FILMS PREPARED BY A PARTIALLY IONIZED BEAM DEPOSITION TECHNIQUE [J].
LI, P ;
YAPSIR, AS ;
RAJAN, K ;
LU, TM .
APPLIED PHYSICS LETTERS, 1989, 54 (24) :2443-2445
[4]   ELECTROMIGRATION IN ALUMINUM FILMS PREPARED WITH A HIGH-RATE MAGNETRON SPUTTERING CATHODE [J].
PARK, YH ;
ROESSLE, P ;
MAJEWSKI, E ;
SMITH, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2308-2311
[5]   REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J].
SCHAIBLE, PM ;
METZGER, WC ;
ANDERSON, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :334-337
[6]   EFFECT OF TEXTURE AND GRAIN-STRUCTURE ON ELECTROMIGRATION IN AL-0.5-PERCENT CU THIN-FILMS [J].
VAIDYA, S ;
SINHA, AK .
THIN SOLID FILMS, 1981, 75 (03) :253-259